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| MRFE6VP100Hr5 MRFE6VP100Hsr5 1 rf device data freescale semiconductor, inc. rf power ldmos transistors high ruggedness n--channel enhancement--mode lateral mosfets rf power transistors designed for both narrowband and broadband ism, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 mhz. these devices are fabricated using freescale?s enhanced ruggedness platform and are suitable for use in applications where high vswrs are encountered. typical performance: v dd =50volts frequency (mhz) signal type p out (w) g ps (db) d (%) imd (dbc) 30--512 (1,3) two--tone (100 khz spacing) 100 pep 19.0 30.0 -- 3 0 512 (2) cw 100 27.2 70.0 ? 512 (2) pulse (200 sec, 20% duty cycle) 100 peak 26.0 70.0 ? load mismatch/ruggedness frequency (mhz) signal type vswr p out (w) test voltage result 512 (2) pulse (100 sec, 20% duty cycle) >65:1 at all phase angles 130 (3 db overdrive) 50 no device degradation 512 (2) cw 126 (3 db overdrive) 1. measured in 30--512 mhz broadband reference circuit. 2. measured in 512 mhz narrowband test circuit. 3. the values shown are the minimum m easured performance numbers across the indicated frequency range. features ? wide operating frequency range ? extremely rugged ? unmatched, capable of very broadband operation ? integrated stab ility enhancements ? low thermal resistance ? integrated esd protection circuitry ? in tape and reel. r5 suffix = 50 units, 56 mm tape width, 13 inch reel. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +133 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg --65 to +150 c case operating temperature t c --40 to +150 c operating junction temperature (4,5) t j --40 to +225 c 4. continuous use at maximum temperature will affect mttf. 5. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. document number: MRFE6VP100H rev. 0, 5/2012 freescale semiconductor technical data 1.8--2000 mhz, 100 w, 50 v broadband rf power ldmos transistors MRFE6VP100Hr5 MRFE6VP100Hsr5 ni--780s--4 MRFE6VP100Hsr5 n i -- 7 8 0 -- 4 MRFE6VP100Hr5 figure 1. pin connections (top view) drain a drain b gate a gate b note: the backside of the package is the source terminal for the transistor. ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 table 2. thermal characteristics characteristic symbol value (1,2) unit thermal resistance, junction to case cw: case temperature 81 c, 100 w cw, 50 vdc, i dq(a+b) = 100 ma, 512 mhz r jc 0.38 c/w thermal impedance, junction to case pulse: case temperature 73 c, 100 w peak, 100 sec pulse width, 20% duty cycle, 50 vdc, i dq(a+b) = 100 ma, 512 mhz z jc 0.12 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) b, passes 250 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (3) gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 400 nadc drain--source breakdown voltage (v gs =0vdc,i d =50ma) v (br)dss 133 141 ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 3 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 10 adc on characteristics gate threshold voltage (3) (v ds =10vdc,i d = 170 adc) v gs(th) 1.6 2.1 2.6 vdc gate quiescent voltage (v dd =50vdc,i d = 100 madc, measured in functional test) v gs(q) 2.1 2.6 3.1 vdc drain--source on--voltage (3) (v gs =10vdc,i d =1adc) v ds(on) ? 0.23 ? vdc dynamic characteristics (3) reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.24 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 23.9 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 73.6 ? pf functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq(a+b) = 100 ma, p out = 100 w peak (20 w avg.), f = 512 mhz, 200 sec pulse width, 20% duty cycle power gain g ps 25.0 26.0 27.0 db drain efficiency d 68.0 70.0 ? % input return loss irl ? -- 1 4 -- 9 db load mismatch/ruggedness (in freescale test fixture, 50 ohm system, i dq(a+b) = 100 ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 512 pulse (100 sec, 20% duty cycle) >65:1 at all phase angles 130 peak (3 db overdrive) 50 no device degradation cw 126 (3 db overdrive) 1. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 2. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. 3. each side of device measured separately. MRFE6VP100Hr5 MRFE6VP100Hsr5 3 rf device data freescale semiconductor, inc. typical characteristics 50 0.1 1000 010 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 20 c iss 10 1 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc note: each side of device measured separately. i dq(a+b) = 100 ma figure 3. normalized v gs versus quiescent current and case temperature normalized v gs(q) t c , case temperature ( c) 1.05 1.04 1.02 1.01 1.03 1 0.99 0.98 0.97 0.96 0.95 100 -- 5 0 0 --25 25 50 75 200 ma v dd =50vdc 250 10 8 90 t j , junction temperature ( c) figure 4. mttf versus junction temperature -- cw 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 5 i d =2.2amps 2.8 amps 3.3 amps 100 300 ma 600 ma v dd =50vdc note: mttf value represents the total cumulative operating time under indicated test conditions. 30 40 100 --1.945 i dq (ma) slope (mv/ c) 200 --1.826 300 --1.700 600 --1.648 4 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 512 mhz narrowband production test fixture figure 5. MRFE6VP100Hr5(hsr5) narrowband test circuit component layout ? 512 mhz MRFE6VP100H/s rev. 1 cut out area coax1 coax2 coax3 coax4 c1 b1 l1 c13 c2 c4 c5 c3 c6 c7 l2 c9 c8 b2 l3 c11 c10 c12 c14 c24 c15 c16 c17 c18 c19 l4 c22 c21 c20 c23 table 5. MRFE6VP100Hr5(hsr5) narrowband test circuit component designations and values ? 512 mhz part description part number manufacturer b1, b2 small ferrite beads, surface mount 2743019447 fair-rite c1, c8 22 f, 35 v tantalum capacitors t491x226k035at kemet c2, c9 120 pf chip capacitors atc100b121jt500xt atc c3 4.3 pf chip capacitor atc100b4r3ct500xt atc c4, c5 56 pf chip capacitors atc100b560ct500xt atc c6, c7, c15, c16, c17, c18 27 pf chip capacitors atc100b270jt500xt atc c10, c21 0.1 f chip capacitors c1812f104k1ractu kemet c11, c22 0.01 f chip capacitors c1825c103k1gactu kemet c12, c23 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c13, c19 240 pf chip capacitors atc100b241jt200xt atc c14, c20 2.2 f chip capacitors g2225x7r225kt3ab atc c24 7.5 pf chip capacitor atc100b7r5ct500xt atc coax1, 2 25 ? semi rigid coax, 2.2 shield length ut-141c-25 micro-coax coax3, 4 25 ? semi rigid coax, 2.0 shield length ut-141c-25 micro-coax l1, l2 5 turns, 18.5 nh inductors, wire wound a05tklc coilcraft l3, l4 7 turns, 22 nh inductors, wire wound b07tjlc coilcraft pcb 0.030 , r =2.55 ad255d arlon MRFE6VP100Hr5 MRFE6VP100Hsr5 5 rf device data freescale semiconductor, inc. z1 0.366 0.082 microstrip z2, z15 0.070 0.102 microstrip z3, z16 0.094 0.102 microstrip z4, z17 0.103 0.102 microstrip z5, z18 0.125 0.102 microstrip z6, z19 0.168 0.102 microstrip z7*, z20* 0.912 0.058 microstrip z8, z21 0.420 0.726 microstrip z9, z22 0.271 0.507 microstrip z10*, z23* 0.822 0.150 microstrip z11, z24 0.590 0.216 microstrip z12, z25 0.257 0.216 microstrip z13 0.192 0.082 microstrip z14 0.173 0.082 microstrip * line length includes microstrip bends figure 6. MRFE6VP100Hr5(hsr5) narrowband test circuit schematic ? 512 mhz table 6. MRFE6VP100Hr5(hsr5) narrowband test circuit microstrips ? 512 mhz description microstrip description microstrip v bias rf input z1 dut z10 z11 coax1 coax2 z12 c1 z9 z22 v bias v supply c13 c12 + z2 z15 c4 c5 z3 z16 c3 z4 z17 z20 z6 z19 rf output coax3 coax4 z14 z5 z18 z7 l1 z8 z21 z13 c6 c7 b1 c2 l2 c8 c9 l3 c14 c10 + + c11 c16 c15 z24 z25 c17 c18 z23 v supply c19 c23 + l4 c20 c21 c22 c24 b2 6 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 typical characteristics ? 512 mhz p in , input power (dbm) 50 46 42 30 52 48 40 p out , output power (dbm) 44 54 28 26 24 18 22 20 58 36 34 38 12 16 14 v dd =50vdc i dq(a+b) = 100 ma f = 512 mhz 512 117 132 f (mhz) p1db (w) p3db (w) 0 v gs , gate--source voltage (volts) figure 7. cw output power versus gate--source voltage at a constant input power 0 135 120 p out , output power (watts) 75 60 45 30 15 1.5 2 2.5 3 4.5 v dd =50vdc f = 512 mhz figure 8. cw output power versus input power 21 28 3 10 80 10 26 24 70 60 50 40 30 p out , output power (watts) cw figure 9. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) d 27 25 23 100 200 25 _ c t c =--30 _ c 85 _ c 85 _ c v dd =50vdc i dq(a+b) = 100 ma f = 512 mhz 25 _ c -- 3 0 _ c 22 20 105 90 p in =0.24w p in =0.12w 0.5 1 3.5 4 56 g ps MRFE6VP100Hr5 MRFE6VP100Hsr5 7 rf device data freescale semiconductor, inc. 512 mhz narrowband production test fixture v dd =50vdc,i dq(a+b) = 100 ma, p out = 100 w peak f mhz z source ? z load ? 512 1.50 + j8.90 12.2 + j18.0 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. figure 10. narrowband series equivalent source and load impedance ? 512 mhz input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ? 8 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 30--512 mhz broadband reference circuit table 7. 30--512 mhz broadband performance (in freescale reference circuit, 50 ohm system) v dd =50volts,i dq(a+b) = 400 ma signal type p out (w) f (mhz) g ps (db) d (%) imd (dbc) two-tone (200 khz spacing) 25 pep 30 24.5 25.3 -37.8 100 19.6 19.9 -35.7 512 21.3 20.3 -42.8 50 pep 30 24.5 36.7 -29.1 100 19.9 28.9 -32.9 512 21.7 29.6 -43.7 75 pep 30 23.9 44.6 -24.1 100 19.4 35.1 -25.1 512 21.7 36.8 -37.4 100 pep 30 23.2 50.7 -20.1 100 18.8 39.8 -20.4 512 21.6 42.2 -28.6 MRFE6VP100Hr5 MRFE6VP100Hsr5 9 rf device data freescale semiconductor, inc. 30--512 mhz broadband reference circuit figure 11. MRFE6VP100Hr5(hsr5) broadband reference circuit component layout ? 30--512 mhz MRFE6VP100H rev. 1 r1 t2 c1 r3 q1 e3 c2 c3 e4 e2 e1 t1 r4 l2 c15 c10 c9 c7 c8 e5 t4 l1 c6 c5 c14 r2 c4 c16 c13 c12 c11 connects shields above pcb t3 e6 e7 table 8. MRFE6VP100Hr5(hsr5) broadband reference circuit component designations and values ? 30--512 mhz part description part number manufacturer c1, c4 2.2 f chip capacitors c1825c225j5rac kemet c2, c3, c7, c8, c9, c10 20k pf chip capacitors atc200b203kt50xt atc c5, c13 200 nf chip capacitors c1812c224k5rac-tu kemet c6, c12 2.2 f chip capacitors g2225x7r225kt3ab atc c11 2.7 pf chip capacitor atc100b2r7bt500xt atc c14, c16 470 f, 63 v electrolytic capacitors mcgpr63v477m13x26-rh multicomp c15 2.0 pf chip capacitor atc100b2r0bt500xt atc e1, e2 #43 ferrite beads 2643023402 fair-rite e3, e4, e5 binocular toroid k material 12-365-k ferronics e6, e7 toroid ferrite k material 1 1 -- 7 5 0 -- k ferronics l1, l2 10 turns, #18 awg, toroid transformer with ferrites e6, e7 8075 copper magnetic wire belden q1 rf power ldmos transistor MRFE6VP100Hr5 freescale r1, r2 10 ? , 1/4 w chip resistors crcw120610rojnea vishay r3, r4 56 ? , 1/4 w chip resistors crcw120656rojnea vishay t1 50 ? flex cable, 4 sucoform 141 hubert+suhner t2, t3 22 ? flex cable, 3.25 m27500-16rc1509 whitmor-wirenetics t4 25 ? semi rigid, 2.75 ut-90-25 micro-coax pcb 0.030 , r =2.55 ad255a arlon 10 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 z1 0.366 0.082 microstrip z2, z3 0.070 0.102 microstrip z4,z5 0.094 0.102 microstrip z6*, z7* 1.375 0.063 microstrip z8, z9 0.561 0.219 microstrip z10, z11 0.250 0.219 microstrip z12*, z13* 1.125 0.150 microstrip z14, z15 0.563 0.219 microstrip z16, z17 0.094 0.219 microstrip z18, z19 0.156 0.219 microstrip z20 0.359 0.078 microstrip * line length includes microstrip bends table 9. MRFE6VP100Hr5(hsr5) narrowband test circuit microstrips ? 30--512 mhz description microstrip rf input z1 dut z12 z14 z16 z10 z11 v bias v supply c14 + z2 z3 c2 z4 rf output z6 z9 r1 c1 l1, e6 c6 c5 c8 c7 c15 r3 c11 z18 c3 z5 z8 z7 r4 v bias r2 c4 z13 v supply c16 + l2, e7 c12 c13 z15 z17 c9 c10 z19 c3 description microstrip figure 12. MRFE6VP100Hr5(hsr5) broadband test circuit schematic ? 30--512 mhz e1, e2 t1 t3 e4 t2 e3 e5 t4 z20 MRFE6VP100Hr5 MRFE6VP100Hsr5 11 rf device data freescale semiconductor, inc. typical characteristics ? 30--512 mhz broadband reference circuit p out , output power (watts) cw d , drain efficiency (%) 0 g ps f, frequency (mhz) figure 13. power gain, cw output power and drain efficiency versus frequency at a constant input power 0 28 26 24 0 210 180 165 150 75 60 45 30 d g ps , power gain (db) 22 20 18 16 14 12 2 50 100 150 200 250 300 550 120 15 v dd =50vdc,p in =2w i dq(a+b) = 100 ma p out 10 8 6 4 350 400 450 500 90 105 135 195 0 v gs , gate--source voltage (volts) figure 14. cw output power versus gate--source voltage at a constant input power 0 200 150 p out , output power (watts) 100 50 0.5 1 2.5 3 4 1.5 2 3.5 512 mhz v dd =50vdc p in =1w 30 mhz 100 mhz 0 v gs , gate--source voltage (volts) figure 15. cw output power versus gate--source voltage at a constant input power 0 200 150 p out , output power (watts) 100 50 0.5 1 2.5 3 4 1.5 2 3.5 512 mhz 30 mhz 100 mhz v dd =50vdc p in =2w 12 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 typical characteristics ? 30--512 mhz broadband reference circuit figure 16. cw output power versus input power p in , input power (dbm) 48 44 40 36 46 p out , output power (dbm) 42 50 34 32 30 24 28 26 52 36 34 38 18 22 20 30 100 512 78 81 123 107 118 142 f (mhz) p1db (w) p3db (w) 12 26 3 10 80 10 22 18 60 50 40 30 20 p out , output power (watts) cw figure 17. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 20 16 14 100 200 24 70 g ps 100 mhz v dd =50vdc i dq(a+b) = 100 ma v dd =50vdc i dq(a+b) = 100 ma f=30mhz 512 mhz 100 mhz d 512 mhz 30 mhz 100 mhz 512 mhz 30 mhz MRFE6VP100Hr5 MRFE6VP100Hsr5 13 rf device data freescale semiconductor, inc. typical characteristics ? 30--512 mhz broadband reference circuit ? two--tone (1) figure 18. intermodulation distortion products versus output power ? 30 mhz -- 7 0 -- 1 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq(a+b) = 400 ma f1 = 29.9 mhz, f2 = 30.1 mhz two--tone measurements 3rd order -- 3 0 -- 4 0 -- 5 0 100 200 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 figure 19. intermodulation distortion products versus output power ? 100 mhz -- 7 0 -- 1 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq(a+b) = 400 ma f1 = 99.9 mhz, f2 = 100.1 mhz two--tone measurements 3rd order -- 3 0 -- 4 0 -- 5 0 100 200 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 figure 20. intermodulation distortion products versus output power ? 520 mhz -- 7 0 -- 2 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq(a+b) = 400 ma f1 = 511.9 mhz, f2 = 512.1 mhz two--tone measurements 3rd order -- 3 0 -- 4 0 -- 5 0 100 200 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 -- 2 0 -- 2 0 1. the distortion products are referenced to one of the two tones and the peak envelope power (pep) is 6 db above the power in a single tone. 14 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 30--512 mhz broadband reference circuit z o =50 ? z source f = 512 mhz f=30mhz z load f=30mhz f = 512 mhz v dd =50vdc,p out = 100 w cw f mhz z source ? z load ? 30 10.7 + j1.20 45.8 ? j9.00 64 10.9 + j0.70 39.7 ? j15.4 88 10.9 + j0.50 33.9 ? j18.1 108 10.3 + j0.70 30.0 ? j14.4 144 11.0 + j0.70 26.0 ? j16.7 170 10.4 + j0.60 21.8 ? j13.4 230 9.90 + j0.90 17.0 ? j10.7 352 8.90 + j2.30 13.8 ? j0.60 450 7.60 + j4.80 16.9 + j9.50 512 7.20 + j6.00 23.7 + j13.5 z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. input matching network device under test output matching network -- -- + + z source z load 50 ? 50 ? figure 21. broadband series equivalent source and load impedance ? 30--512 mhz MRFE6VP100Hr5 MRFE6VP100Hsr5 15 rf device data freescale semiconductor, inc. package dimensions 16 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 MRFE6VP100Hr5 MRFE6VP100Hsr5 17 rf device data freescale semiconductor, inc. 18 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 MRFE6VP100Hr5 MRFE6VP100Hsr5 19 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 may 2012 ? initial release of data sheet 20 rf device data freescale semiconductor, inc. MRFE6VP100Hr5 MRFE6VP100Hsr5 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MRFE6VP100H rev. 0, 5/2012 |
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